View BGA711L7_3159765.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BGA711L7 single-band umts lna (2100, 1900 mhz) data sheet, v3.2, may 2009 rf & protection devices
edition 2009-05-27 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2009. all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the app lication of the device, infi neon technologies hereby disclaims any and all warranties a nd liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology , delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain da ngerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safe ty or effectiveness of that device or system. life support devices or systems are intended to be implanted in the hu man body, or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
data sheet 3 v3.2, 2009-05-27 BGA711L7 - low power single-band umts lna BGA711L7 revision history: 2009-05-27, v3.2 previous version: 2008-11-05, v3.1 page subjects (major cha nges since last revision) 7 updated dc characteri stics (added limits) 9, 10, 11 updated footnotes 18 updated value of c4 at application circuit schematic for band ii
data sheet 4 v3.2, 2009-05-27 BGA711L7 - low power single-band umts lna table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.3 esd integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.5 gain mode select truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.6 switching times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.7 supply current and power gain characteristics; t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.8 logic signal characteristics; t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.9 measured rf characteristics umts band s i / iv / x (with reference resistor) . . . . . . . . . . . . . . . . . . 9 2.10 measured rf characteristics umts bands i / iv / x ( without reference resistor) . . . . . . . . . . . . . . . 10 2.11 measured rf characteristics umts ba nd ii (with reference resistor) . . . . . . . . . . . . . . . . . . . . . . . . 11 2.12 measured performance high band (band i) high gain mo de vs. frequency . . . . . . . . . . . . . . . . . . 12 2.13 measured performance high band (band i) high gain mode vs. temperature . . . . . . . . . . . . . . . . 13 2.14 measured performance high band (band i) low gain m ode vs. frequency . . . . . . . . . . . . . . . . . . . 14 2.15 measured performance high band (band i) low gain m ode vs. temperature . . . . . . . . . . . . . . . . . 16 3 application circuit and block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.1 umts bands i, iv and x application circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 7 3.2 umts band ii application circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.3 pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.4 application board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4 physical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.1 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 table of contents
data sheet 5 v3.2, 2009-05-27 BGA711L7 - low power single-band umts lna description 1 description the BGA711L7 is a low current single-band low noise am plifier mmic for umts bands i, iv and x. the lna is based upon infineon?s proprietary and cost-effective sige:c technology and comes in a low profile tslp-7-1 leadless green package. because the matching is off ch ip, the 2100 mhz path can be easily converted into a 1900 mhz path by optimizing the input and output matchi ng network. this document specifies the electrical parameters, pinout, application circuit and packaging of the chip. figure 1 block diagram of single-band lna features ? gain: 17 / -8 db in high / low gain mode ? noise figure: 1.1 db in high gain mode ? supply current: 3.6 / 0.5 ma in high / low gain mode ? standby mode (< 2 a typ.) ? output internally matched to 50 ? ? inputs pre-matched to 50 ? ? 2 kv hbm esd protection ? low external component count ? small leadless tslp-7-1 package (2.0 x 1.3 x 0.39 mm) ? pb-free (rohs compliant) package tslp-7-1 package type package marking chip BGA711L7 tslp-7-1 b1 t1531 %*$/b&klsb%o'yvg %ldvlqj /rjlf &lufxlwu\ 5)287 55() 9&& 5),1 9(1 *1' 9*6
BGA711L7 - low power single-band umts lna electrical characteristics absolute maximum ratings data sheet 6 v3.2, 2009-05-27 2 electrical characteristics 2.1 absolute maximum ratings 2.2 thermal resistance 2.3 esd integrity table 1 absolute maximum ratings parameter symbol values unit note / test condition min. max. supply voltage v cc -0.3 3.6 v supply current i cc 10 ma pin voltage v pin -0.3 v cc +0.3 v all pins except rf input pin pin voltage rf input pin v rfin -0.3 0.9 v rf input power p rfin 4dbm junction temperature t j 150 c ambient temperature range t a -30 85 c storage temperature range t stg -65 150 c table 2 thermal resistance parameter symbol value unit note / test conditions thermal resistance junction to soldering point r thjs 240 k/w table 3 esd integrity parameter symbol value (typ.) unit note / test conditions esd hardness hbm 1) 1) according to jesd22-a114 v esd-hbm 2000 v all pins
data sheet 7 v3.2, 2009-05-27 BGA711L7 - low power single-band umts lna electrical characteristics dc characteristics 2.4 dc characteristics 2.5 gain mode select truth table 2.6 switching times table 4 dc characteristics, t a =25c parameter symbol values unit note / test condition min. typ. max. supply voltage v cc 2.6 2.8 3.0 v supply current high gain mode i cchg 3.6 ma supply current low gain mode i cclg 500 a supply current standby mode i ccoff 0.1 2.0 a logic level high v hi 1.5 2.8 v ven and vgs logic level low v lo -0.2 0.0 0.5 v logic currents ven i enl 0.1 a ven i enh 5.0 6.0 a logic currents vgs i gsl 0.1 avgs i gsh 5.0 6.0 a table 5 truth table control voltage state bands i, ii, iv and x ven vgs hg lg hl off on h h on off l l standby 1) 1) in order to achieve minimum standby current it is encour aged to apply logic low-level at the vgs pin in standby mode although this is not mandatory. details see section 2.4. lh table 6 typical switching times; t a = -30 ... 85 c parameter symbol values unit note / test condition min. typ. max. settling time gainstep t gs 1 s switching lg ? hg
BGA711L7 - low power single-band umts lna electrical characteristics supply current and power gain characteristics; t a =25c data sheet 8 v3.2, 2009-05-27 2.7 supply current and po wer gain characteristics; t a =25c supply current and power gain high gain mode versus reference resistor r ref (see figure 2 on page 17 for reference resistor; low gain mode supply cu rrent is independent of reference resistor). 2.8 logic signal characteristics; t a =25c current consumption of logic inputs ven, vgs supply current i cc =f ( r ref ) v cc =2.8v power gain |s 21 | = f ( r ref ) v cc =2.8v logic currents i en = f ( v en ) v cc =2.8v logic currents i gs = f ( v gs ) v cc =2.8v 1 10 100 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 r ref [k ? ] icc [ma] 10 100 1000 16 16.5 17 17.5 18 18.5 19 r ref [k ? ] power gain [db] 0 0.5 1 1.5 2 2.5 3 0 2 4 6 v en [v] i en [a] 0 0.5 1 1.5 2 2.5 3 0 2 4 6 v gs [v] i gs [a]
data sheet 9 v3.2, 2009-05-27 BGA711L7 - low power single-band umts lna electrical characteristics measured rf characteristics umts bands i / iv / x (with reference resistor) 2.9 measured rf characteristics umts bands i / iv / x (with re ference resistor) table 7 typical characteristics 2100 mhz band t a =25c, v cc =2.8v, r ref =27k ? parameter symbol values unit note / test condition min. typ. max. pass band range band i / x 2110 2170 mhz pass band range band iv 2110 2155 mhz current consumption i cchg 3.6 ma high gain mode i cclg 0.5 ma low gain mode gain s 21hg 17.0 db high gain mode s 21lg -7.6 db low gain mode reverse isolation 1) 1) verification based on aql; not 100% tested in production s 12hg -36 db high gain mode s 12lg -8 db low gain mode noise figure nf hg 1.1 db high gain mode nf lg 7.8 db low gain mode input return loss 1) s 11hg -20 db 50 ?, high gain mode s 11lg -15 db 50 ?, low gain mode output return loss 1) s 22hg -19 db 50 ? , high gain mode s 22lg -17 db 50 ? , low gain mode stability factor 2) 2) guaranteed by device design; not tested in production k >2.3 dc to 10 ghz; all gain modes input compression point 1) ip 1dbhg -8 dbm high gain mode ip 1dblg -2 dbm low gain mode inband iip3 1) f 1 - f 2 =1mhz p f1 = p f2 =-37dbm iip3 hg iip3 lg -2 7 dbm high gain mode low gain mode
BGA711L7 - low power single-band umts lna electrical characteristics measured rf characteristics umts bands i / iv / x (without ref. resistor) data sheet 10 v3.2, 2009-05-27 2.10 measured rf characteristics umts bands i / iv / x (without ref. resistor) table 8 typical characteristics 2100 mhz band t a =25c, v cc =2.8v, r ref =n/c parameter symbol values unit note / test condition min. typ. max. pass band range band i / x 2110 2170 mhz pass band range band iv 2110 2155 mhz current consumption i cchg 3.3 ma high gain mode i cclg 0.5 ma low gain mode gain s 21hg 16.7 db high gain mode s 21lg -7.7 db low gain mode reverse isolation 1) 1) verification based on aql; not 100% tested in production s 12hg -36 db high gain mode s 12lg -8 db low gain mode noise figure nf hg 1.1 db high gain mode nf lg 8.1 db low gain mode input return loss 1) s 11hg -21 db 50 ?, high gain mode s 11lg -14 db 50 ?, low gain mode output return loss 1) s 22hg -19 db 50 ? , high gain mode s 22lg -18 db 50 ? , low gain mode stability factor 2) 2) guaranteed by device design; not tested in production k >2.3 dc to 10 ghz; all gain modes input compression point 1) ip 1dbhg -8 dbm high gain mode ip 1dblg -2 dbm low gain mode inband iip3 1) f 1 - f 2 =1mhz p f1 = p f2 =-37dbm iip3 hg iip3 lg -2 7 dbm high gain mode low gain mode
data sheet 11 v3.2, 2009-05-27 BGA711L7 - low power single-band umts lna electrical characteristics measured rf characteristics umts band ii (with reference resistor) 2.11 measured rf characteristics umts band ii (with reference resistor) table 9 typical characteristics 1900 mhz band t a =25c, v cc =2.8v, r ref =27k ? parameter symbol values unit note / test condition min. typ. max. pass band range band ii 1930 1990 mhz current consumption i cchg 3.6 ma high gain mode i cclg 0.5 ma low gain mode gain s 21hg 17.2 db high gain mode s 21lg -9.2 db low gain mode reverse isolation 1) 1) verification based on aql; not 100% tested in production s 12hg -38.6 db high gain mode s 12lg -9.2 db low gain mode noise figure nf hg 1.1 db high gain mode nf lg 9.4 db low gain mode input return loss 1) s 11hg -14 db 50 ?, high gain mode s 11lg -15 db 50 ?, low gain mode output return loss 1) s 22hg -15 db 50 ? , high gain mode s 22lg -18 db 50 ? , low gain mode stability factor 2) 2) guaranteed by device design; not tested in production k >2.2 dc to 10 ghz; all gain modes input compression point 1) ip 1dbhg -7 dbm high gain mode ip 1dblg -3 dbm low gain mode inband iip3 1) f 1 - f 2 =1mhz p f1 = p f2 =-37dbm iip3 hg iip3 lg -3 2 dbm high gain mode low gain mode
BGA711L7 - low power single-band umts lna electrical characteristics measured performance high band (band i) high gain mode vs. frequency data sheet 12 v3.2, 2009-05-27 2.12 measured performance high band (ban d i) high gain mode vs. frequency t a =25c, v cc =2.8v, v gs =2.8v, v en =2.8v, r ref =27k ? power gain |s 21 | = f ( f ) power gain wideband |s 21 | = f ( f ) matching | s 11 | = f ( f ), | s 22 | = f ( f ) gainstep hg-lg | ? s 21 | = f ( f ) 2.11 2.12 2.13 2.14 2.15 2.16 2.17 15 16 17 18 19 20 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 ?60 ?50 ?40 ?30 ?20 ?10 0 10 20 frequency [ghz] power gain [db] 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 2.11 2.12 2.13 2.14 2.15 2.16 2.17 24 24.5 25 25.5 26 frequency [ghz] delta gain [db] 25c ?30c 85c 25c ?30c 85c 25c ?30c 85c
data sheet 13 v3.2, 2009-05-27 BGA711L7 - low power single-band umts lna electrical characteristics measured performance high band (band i) high gain mode vs. temperature 2.13 measured performance high band (ban d i) high gain mode vs. temperature v cc =2.8v, v gs =2.8v, v en =2.8v, f = 2140 mhz, r ref =27k ? noise figure nf = f ( f ) input compression p1db = f ( f ) power gain |s 21 | = f ( t a ) supply current i cc = f ( t a ) 2.11 2.12 2.13 2.14 2.15 2.16 2.17 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 frequency [ghz] nf [db] 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?14 ?12 ?10 ?8 ?6 ?4 ?2 0 frequency [ghz] p1db [dbm] ?40 ?20 0 20 40 60 80 100 15 16 17 18 19 20 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 2 2.5 3 3.5 4 4.5 5 t a [c] i cc [ma]
BGA711L7 - low power single-band umts lna electrical characteristics measured performance high band (band i) low gain mode vs. frequency data sheet 14 v3.2, 2009-05-27 2.14 measured performance high band (ban d i) low gain mode vs. frequency t a =25c, v cc =2.8v, v gs =0v, v en =2.8v, r ref =27k ? noise figure nf = f ( t a ) input compression p1db = f ( t a ) power gain |s 21 | = f ( f ) power gain wideband |s 21 | = f ( f ) ?40 ?20 0 20 40 60 80 100 0.6 0.8 1 1.2 1.4 1.6 1.8 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?14 ?12 ?10 ?8 ?6 ?4 ?2 0 t a [c] p1db [dbm] 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?11 ?10 ?9 ?8 ?7 ?6 ?5 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] power gain [db]
data sheet 15 v3.2, 2009-05-27 BGA711L7 - low power single-band umts lna electrical characteristics measured performance high band (band i) low gain mode vs. frequency matching | s 11 | = f ( f ), | s 22 | = f ( f ) noise figure nf = f ( f ) input compression p1db = f ( f ) 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 2.11 2.12 2.13 2.14 2.15 2.16 2.17 5 6 7 8 9 10 11 frequency [ghz] nf [db] 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?10 ?8 ?6 ?4 ?2 0 2 4 frequency [ghz] p1db [dbm]
BGA711L7 - low power single-band umts lna electrical characteristics measured performance high band (band i) low gain mode vs. temperature data sheet 16 v3.2, 2009-05-27 2.15 measured performance high band (ban d i) low gain mode vs. temperature v cc =2.8v, v gs =0v, v en =2.8v, f = 2140 mhz, r ref =27k ? power gain |s 21 | = f ( t a ) supply current i cc = f ( t a ) noise figure nf = f ( t a ) input compression p1db = f ( t a ) ?40 ?20 0 20 40 60 80 100 ?11 ?10 ?9 ?8 ?7 ?6 ?5 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 t a [c] i cc [ma] ?40 ?20 0 20 40 60 80 100 5 6 7 8 9 10 11 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?10 ?8 ?6 ?4 ?2 0 2 4 t a [c] p1db [dbm]
data sheet 17 v3.2, 2009-05-27 BGA711L7 - low power single-band umts lna application circuit and block diagram umts bands i, iv and x application circuit schematic 3 application circuit and block diagram 3.1 umts bands i, iv and x a pplication circuit schematic figure 2 application circuit wi th chip outline (top view) note: package paddle (pin 0) has to be rf grounded. table 10 parts list part number part type manufacturer size comment l1 chip inductor various 0402 wirewound, q 50 c1 ... c3 chip capacitor various 0402 r ref chip resistor various 0402 bga 711l7 _appl _bld_rref.vsd 3 2 1 4 5 6 biasing & logic circuitry rfout rref vcc rfin ven 7gnd vgs l1 2nh rfin 2100 mhz c2 100 pf c1 10pf rfout 2100 mhz v en = 0 / 2.8 v v gs = 0 / 2.8 v v cc = 2.8 v c3 10nf r ref 27 k ?
BGA711L7 - low power single-band umts lna application circuit and block diagram umts band ii application circuit schematic data sheet 18 v3.2, 2009-05-27 3.2 umts band ii appli cation circuit schematic figure 3 application circuit wi th chip outline (top view) note: package paddle (pin 0) has to be rf grounded. 3.3 pin definition table 11 parts list part number part type manufacturer size comment l1, l2 chip inductor various 0402 wirewound, q 50 c1 ... c4 chip capacitor various 0402 r ref chip resistor various 0402 table 12 pin definition and function pin number symbol function 1 rfin lna input (2100/1900 mhz) 2 ven band select control 3 vgs gain step control 4 vcc supply voltage 5 rref bias current reference resistor (high gain mode) 6 rfout lna output (2100/1900 mhz) 7 gnd package paddle; ground connection for lna and control circuitry bga 711 l7_appl _bld_rref_bandii.vsd 3 2 1 4 5 6 biasing & logic circuitry rfout rref vcc rfin ven 7gnd vgs l1 2.7nh rfin 1900 mhz c2 100pf c1 10pf rfout 1900 mhz v en = 0 / 2.8 v v gs = 0 / 2.8 v v cc = 2.8 v c3 10nf r ref 27 k ? c4 1.2pf l2 2.7 nh
data sheet 19 v3.2, 2009-05-27 BGA711L7 - low power single-band umts lna application circuit and block diagram application board 3.4 application board figure 4 application board layout on 3-layer fr4. top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 17 m cu metallization, gold pl ated. board size: 21 x 19 mm figure 5 cross-section view of application board %*$/b$ssb%rdugyvg 7rsod\huwrsylhz 0lggohod\huwrsylhz %rwwrpod\huwrsyl hz %*$/b&urvvb6hfwlrqb9lhzyvg pp&rsshu pp3uhsuhj)5 pp3uhsuhj)5 pp&rsshu pp)5 pp3uhsuhj)5 pp3uhsuhj)5 pp&rsshu
BGA711L7 - low power single-band umts lna application circuit and block diagram application board data sheet 20 v3.2, 2009-05-27 figure 6 detail of application board layout note: in order to achieve the same performance as given in this datasheet please follow the suggested pcb-layout as closely as possible. the position of th e gnd vias is critical for rf performance. %*$/b$ssb%rdugbh[dfwyvg 5),1 9(1 9*6 9&& 55() 5)287 *1'
data sheet 21 v3.2, 2009-05-27 BGA711L7 - low power single-band umts lna physical characteristics package dimensions 4 physical characteristics 4.1 package dimensions figure 7 recommended footprint and stenci l layout for the tslp-7-1 package figure 8 package outline (top, side and bottom view) figure 9 tape & reel dimensions tslp-7-1-fp v01 smd 0.25 1.4 1.9 0.25 0.2 0.25 0.25 0.2 1.4 1.9 0.3 0.3 0.3 0.2 0.2 0.2 0.2 0.2 stencil apertures copper solder mask r0.1 nsmd 0.25 1.4 1.9 0.25 0.2 0.25 0.25 0.2 1.4 1.9 0.3 0.3 0.3 0.2 0.2 0.2 0.2 0.2 stencil apertures copper solder mask r0.1 0.05 max. +0.1 0.4 1) dimension applies to plated terminal 0.035 1.2 0.05 1 0.05 1.3 0.05 1.7 0.05 2 6 x 0.2 0.035 1) 6 x 0.2 0.035 1) 0.035 1.1 1) 456 1 2 3 7 1) top view bottom view pin 1 marking tslp-7-1-po v04 tslp-7-1-tp v0 3 1.45 4 8 2.18 0.5 pin 1 marking
BGA711L7 - low power single-band umts lna physical characteristics package dimensions data sheet 22 v3.2, 2009-05-27 figure 10 marking layout %*$/b0dunlqjb/d\rxwyvg $ %*$/ 7\shfrgh &: 'dwhfrgh<<:: 3lqpdunlqj /dvhupdunlqj
published by infineon technologies ag www.infineon.com

▲Up To Search▲

Price & Availability of BGA711L7

	To Download BGA711L7 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .